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Keywords:

  • semiconductors;
  • ZnMgO;
  • carrier dynamics;
  • disorder;
  • time-resolved photoluminescence

Abstract

Carrier recombination dynamics in Zn1–xMgxO alloys were studied by time-resolved photoluminescence as function of Mg concentration and lattice temperature for different emission and excitation energies. Disorder and carrier localization effects are found to play a significant role, becoming increasingly important for lower temperatures and higher Mg concentrations.

Emission energy dependent dynamics were analyzed by the application of a theoretical model, yielding a characteristic localization energy of 60 ± 15 meV for the sample with the highest Mg concentration of x = 0.21. (© 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)