• MOCVD;
  • InGaN;
  • quantum wells;
  • thermal stability


The influence of InGaN growth conditions on the structural instability of green light-emitting InGaN quantum wells (QWs) is investigated. The multiple quantum wells (MQWs) were grown by metal-organic chemical vapor deposition (MOCVD), varying the growth rate of InGaN well layers. It is found that the structural deterioration of MQWs attributable to high-temperature post-growth of GaN on MQWs is suppressed by decreasing the growth rate. Atomic force microscope measurement reveals the reduction of In-rich clusters that are fragile under high-temperature process on the surface of MQWs grown at low growth rates. It is demonstrated that the suppression of the formation of these In-rich clusters at the lower growth rates lead to the improvement of the thermal stability and the enhancement of optical properties of green light-emitting diodes. (© 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)