The 36th International Symposium on Compound Semiconductors (ISCS 2009) was held from August 30 to September 2, 2009, in Santa Barbara, California. As in previous symposia, ISCS united researchers investigating III–V and II–IV compound semiconductors as well as SiGe, SiC and carbon related materials and devices.

The ISCS series looks upon a long history, which begun in 1966 with the first “International Symposium on GaAs and Related Compounds” in Reading, England. Since then, the conference has been held annually, rotating between Asia, Europe and North America. The conference selects eminent scientists for three prestigious awards, namely the Welker Award, the Quantum Device Award and the Young Scientist Award.

The 36th symposium in Santa Barbara was attended by 215 scientists from 19 countries, with 28% from Asia, 16% from Europe, 2% from Australia, and 54% from America.

The agenda consisted of 4 plenary talks, 16 invited talks, and 96 contributing talks that were presented together with 65 posters. The plenary talks highlighted advances in various areas: Hideo Ohno from Tohoku University spoke on “Ferromagnetism in III–V Semiconductors”, Peidong Yang from the University of California Berkeley on “Semiconductor Nanowires for Photonics and Energy Conversion”, Hari Manoharan from Stanford University discussed “Spin-Atom Spintronics of Graphene”, and John Bowers from the University of California Santa Barbara “Ge/Si PIN and APD Photodetectors.”

The 37th symposium, held from May 31 to June 4, 2010 in Takamatsu, Japan, is organized by Prof. Yoshiro Hirayama from Tohoku University.

We would like to thank Yasuhiko Arakawa, Oliver Ambacher and Pallab Bhattacharya, who served as Regional Program Chairs and the Technical Program Committee for reviewing the abstracts and generating the program. In addition we would like to thank Ben Streetman who served as the chair of the Awards Committee, the session chairs, and all those who helped with arrangements (© 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)