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Keywords:

  • dislocation network;
  • dislocation-related luminescence;
  • silicon direct wafer bonding;
  • cathodoluminescence

Abstract

A detailed investigation and comparison of low-temperature cathodoluminescent (CL) and electrical properties of DN is presented. The correlations between the CL, electron beam induced current (EBIC), and CV measurements using the DC electric bias as a parameter are established and analyzed in the scope of the calculated theoretical model. A new CL measurement technique that is complimentary to conventional space charge region spectroscopy (SCRS) methods such as DLTS and MCTS is proposed and the first experimental results using this new approach are described. Shallow dislocation-related level Ev+Et=0.1 eV is shown to be responsible for D1 dislocation-related luminescence line. (© 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)