BIAMS – Contributed Article

Fast electron beam charge injection and switching in dielectrics

  1. Hans-Joachim Fitting1,*,
  2. Matthieu Touzin2,†,
  3. Erik Schreiber1

Article first published online: 18 FEB 2011

DOI: 10.1002/pssc.201084003

Issue

physica status solidi (c)

physica status solidi (c)

Special Issue: 10th International Workshop on Nonlinear Optics and Excitation Kinetics in Semiconductors (NOEKS 10) • International Workshop Beam Injection Assessment of Microstructures in Semicondutors (BIAMS 2010)

Volume 8, Issue 4, pages 1282–1286, April 2011

Additional Information

How to Cite

Fitting, H.-J., Touzin, M. and Schreiber, E. (2011), Fast electron beam charge injection and switching in dielectrics. Phys. Status Solidi C, 8: 1282–1286. doi: 10.1002/pssc.201084003

Author Information

  1. 1

    Institute of Physics, University of Rostock, Universitaetsplatz 3, 18051 Rostock, Germany

  2. 2

    Laboratoire de Structure et Propriétés de l'Etat Solide, UMR CNRS 8008, Université de Lille 1, 59655 Villeneuve d'Ascq, France

  1. †

    Phone: +33 320 436 594, Fax: +33 320 436 591

*Phone: +49 381 498 6760, Fax: +49 381 498 6802

  1. †

    Phone: +33 320 436 594, Fax: +33 320 436 591

Publication History

  1. Issue published online: 5 APR 2011
  2. Article first published online: 18 FEB 2011
  3. Manuscript Accepted: 8 NOV 2010
  4. Manuscript Revised: 12 JUL 2010
  5. Manuscript Received: 16 JUN 2010

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Keywords:

  • electron relaxation;
  • secondary electron emission;
  • dielectric charging;
  • electron switching processes

Abstract

Basic investigations of secondary electrons (SE) relaxation and attenuation are made by means of Monte Carlo simulations using ballistic electron scattering and interactions with optical and acoustic phonons as well as impact ionization of valence band electrons. Then the electron beam induced selfconsistent charge transport and secondary electron emission in insulators are described by means of an electron-hole flight-drift model (FDM). Ballistic secondary electrons and holes, their attenuation and drift, as well as their recombination, trapping, and field- and temperature-dependent Poole-Frenkel detrapping are included. Whereas the initial switching-on of the secondary electron emission proceeds over milli-seconds due to long-lasting selfconsistent charging, the switching-off process occurs much faster, even over femto-seconds.

Thus a rapid electron beam switching becomes possible with formation of ultra-short electron beam pulses offering an application in stroboscopic electron microscopy and spectroscopy. (© 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

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