High-resolution photoinduced transient spectroscopy of defect centres in semi-insulating GaP

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Abstract

High-resolution photoinduced transient spectroscopy (HRPITS) has been applied to study electronic properties of point defects in semi-insulating (SI) GaP obtained by high temperature annealing under phosphorus (P) vapour pressure. The parameters of defect centres are extracted from the photocurrent relaxation waveforms, recorded in a wide temperature range of 30–600 K, by means of a two-dimensional spectral analysis based both on the correlation procedure and inverse Laplace transform algorithm. The defect structure of GaP wafers whose SI properties resulted from the annealing under the P vapour pressures of ∼0.05 MPa and ∼0.2 MPa is compared (© 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

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