Characterization of crystalline silicon on glass using photoluminescence

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Abstract

Thin film of amorphous Si deposited on glass substrate was crystallized at 600 °C using solid phase crystallization and further processed for PV application using Crystalline Silicon on Glass technology. The resulting film was polycrystalline and contained dislocations in large density. Photoluminescence (PL) and SunsVoc measurements were applied for characterization of the material properties. The intensity of radiative transitions related to dislocations (DRL) measured at room temperature supplied information about specificities of non-radiative recombination in the material and nicely correlated with open circuit voltage, measured using SunsVoc method. The PL measurements at room temperature showed a capability of fast and reliable prediction of PV performance of the film. (© 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

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