J. E. Bowers et al. describe in their article on pp. 2526 recent research on Ge/Si (avalanche) photodetectors with large gain bandwidth products. The picture shows arrays of Ge/Si (avalanche) photodetectors in wafers fabricated with CMOS (Complementary Metal-Oxide-Semiconductor)-compatible processes. The cross sections for normal-incidence avalanche photodetectors and waveguide-type photodetectors are also shown. The large asymmetry in the avalanche coefficients of electrons and holes in silicon results in large gain-bandwidth product and low noise performance.
Professor Bowers' research interests are in silicon photonic integrated circuits for the next generation of coherent optical systems.