Front Cover: phys. stat. sol. (c) 7/10
Article first published online: 15 SEP 2010
Copyright © 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
physica status solidi (c)
Special Issue: 36th International Symposium on Compound Semiconductors (ISCS 2009)
Volume 7, Issue 10, October 2010
How to Cite
(2010), Front Cover: phys. stat. sol. (c) 7/10. Phys. Status Solidi C, 7: n/a. doi: 10.1002/pssc.201090014
- Issue published online: 15 SEP 2010
- Article first published online: 15 SEP 2010
- Cited By
J. E. Bowers et al. describe in their article on pp. 2526 recent research on Ge/Si (avalanche) photodetectors with large gain bandwidth products. The picture shows arrays of Ge/Si (avalanche) photodetectors in wafers fabricated with CMOS (Complementary Metal-Oxide-Semiconductor)-compatible processes. The cross sections for normal-incidence avalanche photodetectors and waveguide-type photodetectors are also shown. The large asymmetry in the avalanche coefficients of electrons and holes in silicon results in large gain-bandwidth product and low noise performance.
Professor Bowers' research interests are in silicon photonic integrated circuits for the next generation of coherent optical systems.