SEARCH

SEARCH BY CITATION

Keywords:

  • cathodoluminescence;
  • molecular beam epitaxy;
  • nitrides;
  • quantum dots;
  • droplet epitaxy

Abstract

We analyzed the cathodoluminescence of zinc-blende GaN/AlN quantum dots grown by two different methods. Method A being droplet epitaxy, a vapor liquid solid process and method B being Stranski-Krastanov growth. At an equal quantum dot density of 1011 cm-2, droplet epitaxy grown quantum dots have shown a luminescence intensity which was more than one order of magnitude higher than the one of Stranski-Krastanov quantum dots. Furthermore, we revealed a dependency between the quantum dot emission energy and the amount of deposited Ga. (© 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)