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Keywords:

  • InGaN;
  • photoluminescence;
  • annealing

Abstract

An In0.21Ga0.79N epilayer has been studied by using spatially-resolved photoluminescence spectroscopy and Auger electron spectroscopy. The photoluminescence intensity is shown to be distributed highly inhomogeneously, while the epilayer also exhibits strong defect-related emission. It is shown that laser annealing at high enough power densities causes redistribution of indium atoms and results in suppression of the defect-related emission. (© 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)