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Keywords:

  • Schottky contact;
  • SiO2/Si3N4 passivation layer;
  • PLS3;
  • HEMTs

Abstract

This work describes a study regarding the SiO2/Si3N4 passivation layer thickness effect on the Au/Mo/ Al0.25Ga0.75N/GaN/Si (111) rectifier contact behaviour. Two total different thicknesses of SiO2/Si3N4dielectric are deposited on AlGaN/GaN with different residual stress which modify the stress in the AlGaN barrier under the gate. The defects occuring at the dielectric/AlGaN interface are characterized using the photoluminescence technique. I-V characteristics of both Schottky contacts show that the thicker passivation change the Schottky contact behaviour and permit to reduce significantly the density of interface traps involving a drop of the Schottky leakage current of several order of magnitude. (© 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)