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Keywords:

  • carrier transport;
  • crystal defects;
  • gallium nitride

Abstract

The processes of the charge carrier scattering on the short-range potential caused by interaction with polar and nonpolar optical phonons, piezoelectric and acoustic phonons, static strain, neutral and ionized impurities in wurtzite n-GaN with impurity concentration 4×1016–2×1019 cm-3 are considered. The temperature dependences of electron mobility in the range 40–500 K are calculated. (© 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)