The influence of underlying layer on morphology of InGaN quantum dots self-assembled by metal organic vapor phase epitaxy

Authors

  • Lai Wang,

    Corresponding author
    1. State Key Laboratory on Integrated Optoelectronics/Tsinghua National Laboratory for Information Science and Technology, Department of Electronic Engineering, Tsinghua University, Beijing 100084, P.R. China
    • Phone: +86 10 6278 2734, Fax: +86 10 6278 4900
    Search for more papers by this author
  • Wei Zhao,

    1. State Key Laboratory on Integrated Optoelectronics/Tsinghua National Laboratory for Information Science and Technology, Department of Electronic Engineering, Tsinghua University, Beijing 100084, P.R. China
    Search for more papers by this author
  • Wenbin Lv,

    1. State Key Laboratory on Integrated Optoelectronics/Tsinghua National Laboratory for Information Science and Technology, Department of Electronic Engineering, Tsinghua University, Beijing 100084, P.R. China
    Search for more papers by this author
  • Lei Wang,

    1. State Key Laboratory on Integrated Optoelectronics/Tsinghua National Laboratory for Information Science and Technology, Department of Electronic Engineering, Tsinghua University, Beijing 100084, P.R. China
    Search for more papers by this author
  • Zhibiao Hao,

    1. State Key Laboratory on Integrated Optoelectronics/Tsinghua National Laboratory for Information Science and Technology, Department of Electronic Engineering, Tsinghua University, Beijing 100084, P.R. China
    Search for more papers by this author
  • Yi Luo

    1. State Key Laboratory on Integrated Optoelectronics/Tsinghua National Laboratory for Information Science and Technology, Department of Electronic Engineering, Tsinghua University, Beijing 100084, P.R. China
    Search for more papers by this author

Abstract

The influences of two different underlying layers of GaN on the growth of InGaN quantum dots self-assembled by metal organic vapor phase epitaxy are studied. One is a 2 μm high-temperature grown GaN/sapphire template, and the other includes a 15 nm GaN layer on the template which possesses the same growth temperature with InGaN. The results show the latter can reduce the dot diameter greatly, and hence increase the aspect ratio of quantum dots to about 0.5. This morphology improvement is considered related to the strain area reduction at certain locations when InGaN is deposited on low-temperature grown GaN. (© 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

Ancillary