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Keywords:

  • nitrides;
  • MBE;
  • AME;
  • GaN;
  • growth method

Abstract

In this paper we report a new strategy for growth of group III-nitrides by Plasma-Assisted Molecular Beam Epitaxy (PA-MBE), which we term Anion Modulation Epitaxy (AME). In this modified growth method, the nitrogen flux is interrupted periodically to build up a group III surface concentration. This leads to enhanced mobility and thus improved morphology compared to growth using conventional PA-MBE. Direct comparison of GaN samples grown at equivalent temperature by PA-MBE and AME show the advantages of this improved growth procedure (© 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)