InGaN/GaN quantum wells grown on freestanding HfO2 photonic crystals

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Abstract

We report here epitaxial growth of InGaN/GaN quantum wells (QWs) on suspended HfO2 photonic crystal structures by molecular beam epitaxy (MBE). Suspended HfO2 photonic crystals are achieved on silicon substrate by combining film evaporation, electron beam lithography, fast atom beam etching of HfO2 film with dry etching of silicon substrate. InGaN/GaN QWs are subsequently grown on suspended HfO2 photonic crystal structures by MBE technique, and freestanding HfO2 photonic crystal slab can sustain complicated stress change during MBE growth. The reflectance and photoluminescence measurements are performed for epitaxial III-nitride structures (© 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

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