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Keywords:

  • AlGaN/GaN HEMT;
  • gate injection transistor;
  • hole injection;
  • conductivity modulation

Abstract

The numerical simulation of the AlGaN/GaN HEMT with GIT structure is performed while varying the radiative recombination lifetime of electron and hole, and the conductivity modulation in the channel by the hole injection from the gate electrode is investigated. When the radiative recombination lifetime is long, two peaks in the transconductance curve, gm vs. VG is found, and the hole injection from the gate electrode is enhanced. The accumulation of hole is found in the GaN layer under the channel around the source electrode, and the conductivity modulation is significant at the source-gate region and at the drain side of the gate electrode. (© 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)