A 600 V AlGaN/GaN Schottky barrier diode on silicon substrate with fast reverse recovery time

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Abstract

Lateral AlGaN/GaN Schottky barrier diodes on silicon (111) substrate have been fabricated and characterized. The Hall measurement shows the mobility of 1430 cm2/V-s with a sheet carrier density of 9.8 × 1012 cm-2 for the AlGaN/GaN structure. The specific on-state resistance (Ron) is 1.27 mΩ-cm2, while the forward turn-on voltage is 1.43 V at the current density of 100 A/cm2 for device with Schottky-to-ohmic distance of 10 μm. The measured reverse breakdown voltage (VB) at room temperature is up to 600 V without edge termination. The figure-of-merit, (VB)2/Ron, is 302.7 MWcm-2, and fast reverse recovery time is observed for device switched from a forward current density of 720 A/cm2 to a reverse bias of 30 V with di /dt of 60 A/μs. (© 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

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