• GaN;
  • GIT;
  • bi-directional switch;
  • equivalent circuit model


We obtain an equivalent-circuit-model for GaN gate-insulated-transistor (GIT) bi-directional switches (BDSWs) which consists of one current source and three capacitances. Employing this model for the chopper circuit simulation, the gate resistance dependence is included into the input capacitance of CG1S2 and CG1S1 in order to improve the accuracy. By including this influence of the gate resistance, the calculated waveforms and the estimated switching losses agree well with the experimental ones with accuracy of over 90% when the circuit conditions are varied. This gate resistance dependence is considered to be caused by the hole injection at the gate region. By using our proposed model, this equivalent-circuit-model for GIT BDSWs can be treated with like a simple single-gate MOSFET model (© 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)