MOVPE growth of InGaN on Si(111) substrates with an intermediate range of In content



This paper reports on the MOVPE growth of InN and InxGa1-xN with x up to ∼0.4 on AlN/Si (111) substrates. Good quality InN films are grown after a pretreatment of the substrate surface at 1000 °C in NH3. While pretreatment of the substrate surface in N2results the In droplet formation. Single-crystalline InxGa1-xN films with x up to ∼0.4 are successfully grown on Si (111) substrates without phase separation and metallic In incorporation by changing the growth temperature and TMI/(TMI+TEG) molar ratio. Comparative study between the AlN/Si (111) and GaN/α-Al2O3(0001) substrates shows that the quality of InN, GaN and InGaN with low In contents depends on the quality of the underlying layer. While the quality of InGaN at the intermediate In content range hardly depends on of the underlying layer/substrate. These works will allow us towards the fabrication of the future InGaN-Si tandem cell using MOVPE. (© 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)