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Keywords:

  • Hall effect;
  • magnetoresistance;
  • carrier concentration;
  • GaN and GaN/InGaN quantum wells;
  • laser excitation

Abstract

Temperature dependent Hall effect, magnetoresistivity and time resolved photoconductivity studies have been performed on GaN epilayers and GaN/InGaN multiple quantum wells (MQWs) grown on sapphire films by Metal Organic Chemical Vapor Deposition (MOCVD) method. The MQW structures consisted of different width or different amount of quantum wells. We related the electrical parameters with the quantum structure parameters and found that the geometrical variation of the quantum wells may be substituted by the variation of the amount of the quantum wells. The Hall and the magnetoresistivity measurements showed the complex behavior, which was attributed to the inhomogeneities of the samples, similarly to the case of the crystals with great size defects (© 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)