Residual strain in recessed AlGaN/GaN heterostructure field-effect transistors evaluated by micro photoluminescence measurements

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Abstract

The residual strain in AlGaN/GaN heterostructure field-effect transistors (HFETs) with recessed gates and their non-recessed counterparts were investigated by micro photoluminescence measurements (µ-PL). It is found that strain relaxation accounts for the observed sheet carrier density reduction after gate recessing. The usefulness of the method for device processing optimization is demonstrated. (© 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

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