Morphology evolution and optical properties of GaN nano-pyramids grown by selective area MOVPE

Authors

  • Andreas Winden,

    Corresponding author
    1. Peter Grünberg Institute (PGI-9), Forschungszentrum Jülich, 52425 Jülich, Germany
    2. Jülich Aachen Research Alliance (JARA) – Fundamentals of Future Information Technology, Germany
    • Phone: +49-2461-61-2991, Fax: +49-2461-61-8143
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  • Martin Mikulics,

    1. Peter Grünberg Institute (PGI-9), Forschungszentrum Jülich, 52425 Jülich, Germany
    2. Jülich Aachen Research Alliance (JARA) – Fundamentals of Future Information Technology, Germany
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  • Anna Haab,

    1. Peter Grünberg Institute (PGI-9), Forschungszentrum Jülich, 52425 Jülich, Germany
    2. Jülich Aachen Research Alliance (JARA) – Fundamentals of Future Information Technology, Germany
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  • Toma Stoica,

    1. Peter Grünberg Institute (PGI-9), Forschungszentrum Jülich, 52425 Jülich, Germany
    2. Jülich Aachen Research Alliance (JARA) – Fundamentals of Future Information Technology, Germany
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  • Martina von der Ahe,

    1. Peter Grünberg Institute (PGI-9), Forschungszentrum Jülich, 52425 Jülich, Germany
    2. Jülich Aachen Research Alliance (JARA) – Fundamentals of Future Information Technology, Germany
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  • Konrad Wirtz,

    1. Peter Grünberg Institute (PGI-9), Forschungszentrum Jülich, 52425 Jülich, Germany
    2. Jülich Aachen Research Alliance (JARA) – Fundamentals of Future Information Technology, Germany
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  • Hilde Hardtdegen,

    1. Peter Grünberg Institute (PGI-9), Forschungszentrum Jülich, 52425 Jülich, Germany
    2. Jülich Aachen Research Alliance (JARA) – Fundamentals of Future Information Technology, Germany
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  • Detlev Grützmacher

    1. Peter Grünberg Institute (PGI-9), Forschungszentrum Jülich, 52425 Jülich, Germany
    2. Jülich Aachen Research Alliance (JARA) – Fundamentals of Future Information Technology, Germany
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Abstract

The evolution of GaN nano-pyramid growth by selective area metalorganic vapor phase epitaxy (SA-MOVPE) on GaN/c-plane sapphire templates with extremely low pattern fill factor and large inter-hole spacing was studied with scanning electron microscopy (SEM). The optical nanostructure characteristics were investigated by micro-photoluminescence spectroscopy at room temperature. It was found that sub-100 nm structures can be fabricated by controlling the growth time and mask opening size. Single nanostructures exhibit more intense luminescence and a red shift of the band edge transition compared to the GaN layer. (© 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

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