SEARCH

SEARCH BY CITATION

Keywords:

  • m -plane GaN;
  • transistors;
  • enhancement-mode;
  • regrown contact layer

Abstract

High performance enhancement-mode m -plane AlGaN/GaN heterojunction field-effect transistors were reported in this letter. +3 V threshold voltages, 230 mA/mm of maximum drain-source current (Ids(max)), and 58 mS/mm of maximum transconductance (gm(max)) were obtained. High Ids(max) and gm(max) were due to the regrown n+-GaN contact layer. (© 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)