Monolithic integration of semipolar pyramidal LEDs with tailored wavelengths

Authors

  • Masakazu Sugiyama,

    Corresponding author
    1. Department of Electrical Engineering and Information Systems, School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, 113-8656 Tokyo, Japan
    • Phone: +81 3 5841 2336, Fax: +81 3 5841 6027
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  • Tatsuki Fujiwara,

    1. Department of Electrical Engineering and Information Systems, School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, 113-8656 Tokyo, Japan
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  • Yoshiaki Nakano

    1. Research Center for Advanced Science and Technology, The University of Tokyo, 4-6-1 Komaba, Meguro, 153-8904 Tokyo, Japan
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Abstract

Aiming at monolithic in-plane integration of light emitters with multiple wavelengths in a designed manner, InGaN/GaN multiple quantum wells (MQWs) on the semipolar planes of GaN hexagonal pyramids were grown in selective growth windows surrounded by the masks with varied widths (40-240 μm). Growth rate of the pyramid was modulated by a factor of 3 with an increase in the mask width. Its tendency was in accordance with the accumulation of a precursor in the vicinity of the selective area, which was numerically estimated assuming vapour-phase diffusion and surface incorporation of the precursor. Peak wavelength modulation in both cathode luminescence and electro luminescence from the MQWs were observed, and both peaks exhibited similar dependencies on the mask width, which was related to an increase in the thickness of InGaN wells. (© 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

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