ICFSI-13 – Contributed Article

Carbon diffusion and reactivity in Mn5Ge3 thin films

  1. Matthieu Petit1,2,*,
  2. Minh Tuan Dau1,
  3. Guillaume Monier3,4,
  4. Lisa Michez1,2,
  5. Xavier Barre1,
  6. Aurelie Spiesser1,
  7. Vinh Le Thanh1,2,
  8. Alain Glachant1,2,
  9. Cyril Coudreau1,
  10. Luc Bideux3,4,
  11. Christine Robert-Goumet3,4

Article first published online: 15 FEB 2012

DOI: 10.1002/pssc.201100448

Issue

physica status solidi (c)

physica status solidi (c)

Special Issue: 13th International Conference on the Formation of Semiconductor Interfaces (ICFSI-13); see further papers in Phys. Status Solidi A 209, No. 4 (2012) • E-MRS 2011 Fall Meeting – Symposium B: Amorphous Nanostructure Materials; see further papers in Phys. Status Solidi A 209, No. 6 (2012) • 9th International Conference of Optics of Surfaces and Interfaces (OSI 9); see further papers in Phys. Status Solidi B 249, No. 6 (2012)

Volume 9, Issue 6, pages 1374–1377, June 2012

Additional Information

How to Cite

Petit, M., Dau, M. T., Monier, G., Michez, L., Barre, X., Spiesser, A., Thanh, V. L., Glachant, A., Coudreau, C., Bideux, L. and Robert-Goumet, C. (2012), Carbon diffusion and reactivity in Mn5Ge3 thin films. Phys. Status Solidi C, 9: 1374–1377. doi: 10.1002/pssc.201100448

Author Information

  1. 1

    CINaM-CNRS UPR3118, campus de Luminy case 913, 13288 Marseille cedex 9, France

  2. 2

    Aix-Marseille Université, campus de Luminy case 925, 13288 Marseille cedex 9, France

  3. 3

    Clermont Université, Université Blaise Pascal, 24 avenue des Landais, 63000 Clermont-Ferrand, France

  4. 4

    LASMEA, CNRS UMR6602, 63177 Aubiere, France

*Phone: +33 662 922 865, Fax: +33 4 91 41 89 16

Publication History

  1. Issue published online: 4 JUN 2012
  2. Article first published online: 15 FEB 2012
  3. Manuscript Accepted: 26 AUG 2011
  4. Manuscript Revised: 25 AUG 2011
  5. Manuscript Received: 11 JUL 2011

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Keywords:

  • Mn5Ge3;
  • carbon;
  • diffusion;
  • interstitial;
  • XPS;
  • AES

Abstract

The Curie temperature of Mn5Ge3 has been successfully enhanced by carbon doping. In this context the diffusion of a carbon thin film in Mn5Ge3 has been studied at room temperature. A value of the diffusivity of about D = 2.4 × 10-23 ± 0.5 × 10-23 m2 s-1 is reported. This value is in the typical range of interstitial diffusion coefficients. Moreover Auger Ge and Mn peaks shifts and Ge3d core level have been investigated to get some details on the reactivity of carbon atoms in Mn5Ge3.

Mn Auger transitions display a shift of 4 eV whereas Ge transitions do not. Similarly Ge3d core level does not contain C related contribution but presents a Mn one. These observations confirmed the fact that carbon atoms are not inert species for Mn. It suggests that a ternary Ge-Mn-C alloy could occur and should be taken into account when doping the Mn5Ge3 with carbon. (© 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

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