Self-catalyzed, vertically aligned GaN rod-structures by metal-organic vapor phase epitaxy

Authors

  • Christian Tessarek,

    Corresponding author
    1. Max Planck Institute for the Science of Light, Friedrich-Alexander University of Erlangen-Nuremberg, Günther-Scharowsky-Str. 1, 91058 Erlangen, Germany
    • Phone +49-(0)9131-761 341, Fax +49-(0)9131-761 360
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  • Silke Christiansen

    1. Max Planck Institute for the Science of Light, Friedrich-Alexander University of Erlangen-Nuremberg, Günther-Scharowsky-Str. 1, 91058 Erlangen, Germany
    2. Institute of Photonic Technology, Albert-Einstein-Str. 9, 07745 Jena, Germany
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Abstract

This paper will discuss the influence of parameters such as temperature, V/III ratio, atmosphere and pressure on the vertical growth of GaN rod-structures on sapphire by metal-organic vapor phase epitaxy. For all growth experiments a simple two step method is applied consisting of a nitridation step on the sapphire substrate and the growth of GaN. Vertically aligned rod-like structures were achieved with this mask-free and catalyst-free approach. The influence of the nitridation step on the formation process of the vertically rod-structures will be discussed. The results will give an insight into the formation of vertically aligned GaN structures which is an important step towards the understanding and control of self-assembled GaN rods and nanorods in metal-organic vapor phase epitaxy. (© 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

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