Self-assembled m -plane InGaN quantum dots: formation and shape evolution

Authors

  • Xuelin Yang,

    Corresponding author
    1. Institute for Nano Quantum Information Electronics, The University of Tokyo, 4-6-1 Komaba, Meguro, Tokyo 153-8505, Japan
    • Phone: +81 03 5452 6291, Fax: +81 03 5452 6247
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  • Munetaka Arita,

    1. Institute for Nano Quantum Information Electronics, The University of Tokyo, 4-6-1 Komaba, Meguro, Tokyo 153-8505, Japan
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  • Satoshi Kako,

    1. Institute for Nano Quantum Information Electronics, The University of Tokyo, 4-6-1 Komaba, Meguro, Tokyo 153-8505, Japan
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  • Yasuhiko Arakawa

    1. Institute for Nano Quantum Information Electronics, The University of Tokyo, 4-6-1 Komaba, Meguro, Tokyo 153-8505, Japan
    2. Institute of Industrial Science, The University of Tokyo, 4-6-1 Komaba, Meguro, Tokyo 153-8505, Japan
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Abstract

The authors report the formation and shape evolution of m -plane InGaN quantum dots grown on GaN substrates. The formation of the quantum dots is enabled by introducing AlGaN/AlN interlayers prior to the GaN layer. The introduced compressive strain in the GaN layer promotes a growth mode transition during layer growth, from smooth InGaN layer to three dimensional quantum dot structures. The structural transition is consistent with optical properties. Furthermore, we also discuss the shape evolution with different growth conditions and find that the InGaN quantum dots are elongated with decreasing the indium concentration (© 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

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