Growth of GaN and AlGaN on (100) β-Ga2O3 substrates



The crystalline quality of GaN and Al0.08Ga0.92N epitaxial layers on (100) β-Ga2O3 substrates was significantly improved by the facet-controlled growth method. The facets were controlled by changing the nitrogen ambient thermal annealing temperature. We demonstrated the high-crystalline-quality GaN and Al0.08Ga0.92N on β-Ga2O3 substrates, which were comparable to GaN and AlGaN on sapphire substrates using low-temperature buffer layers. This method is useful for the fabrication of vertical-type ultraviolet (UV) light-emitting diodes (LEDs) on β-Ga2O3 substrates. (© 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)