In this work we apply the concept of polarization-matching to calculate the reduction of the built-in field in nitride-based nanostructures operating predominantly in the UV part of the spectrum. In order to realistically describe these systems, our calculations take into account strain limits set by the epitaxial growth of nitride structures as well as alloy miscibility problems.
Complete polarization-matching can be achieved around and beyond 3.4 eV in the case of quantum wells pseudo-morphically grown on GaN. For lower band gap regions, we find that a complete suppression of the built-in field is not possible due to the mentioned constraints. However, the choice of band gap bowing parameter for the AlInN alloy strongly influences the results, particularly in the case of quantum dots. The extent of this effect is studied in detail. (© 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)