• insulated gate bipolar transistor;
  • successive short-circuit;
  • latch up;
  • second breakdown


The increasing demand in terms of device performance and reliability requires continuous developments of power semiconductors that operate under hard switching conditions SOA (Safe Operating Area). The aim of this paper to enable a better understanding of the main problems that are associated with successive short circuit failure modes like (latch up and second breakdown) and also to clarify the correlation with respect to the circuit elements. It investigates the temperature impact of successive short-circuit delay time effects on the failure mechanisms evolutions and to evaluates the feasibility and issues of IGBT under successive short-circuit conditions. The device behaviour can predicted at critical operations such as its latch up during a turn off short circuit condition or if there is an observable aging effect. It is shown that when applied to IXGH-IGBT at its worst short circuit condition (successive short circuit), this one can work securely without affecting the normal system operation at higher temperatures. (© 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)