Deep level transient spectroscopy on proton-irradiated Fe-contaminated p-type silicon

Authors

  • C. K. Tang,

    Corresponding author
    1. University of Oslo, Physics Department/Center for Materials Science and Nanotechnology, P.O. Box 1048 Blindern, 0316 Oslo, Norway
    • University of Oslo, Physics Department/Center for Materials Science and Nanotechnology, P.O. Box 1048 Blindern, 0316 Oslo, Norway

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  • L. Vines,

    1. University of Oslo, Physics Department/Center for Materials Science and Nanotechnology, P.O. Box 1048 Blindern, 0316 Oslo, Norway
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  • B. G. Svensson,

    1. University of Oslo, Physics Department/Center for Materials Science and Nanotechnology, P.O. Box 1048 Blindern, 0316 Oslo, Norway
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  • E. V. Monakhov

    1. University of Oslo, Physics Department/Center for Materials Science and Nanotechnology, P.O. Box 1048 Blindern, 0316 Oslo, Norway
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Abstract

Proton-irradiation has been realized on Fe-contaminated p-type Czochralski silicon and investigated for interaction between Fe and irradiation-induced defects using deep level transient spectroscopy. From isochronal thermal annealings, three distinctive Fe-related defects are observed with energy level position of 0.17, 0.28 and 0.34 eV above the valence band edge. From the evolution of the defect concentration at different annealing temperature, it is suggested that Fe has reacted with prominent irradiation-induced defects, such as the vacancy-oxygen complex and the divacancy center. (© 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

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