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Keywords:

  • nanostructured semiconductors;
  • composition measurements;
  • Raman analysis;
  • PECVD

Abstract

Nanostructured silicon carbon films, composed of silicon nanocrystals embedded in hydrogenated amorphous silicon carbon matrix, have been prepared by plasma enhanced chemical vapor deposition technique using silane and methane gas mixture diluted in hydrogen. The composition, structure and surface morphology of the films have been investigated by nuclear techniques, Raman, Fourier transform infrared spectroscopy and atomic force microscopy. The study has demonstrated that the nanostructured silicon carbon films can be deposited at low temperature (250 °C) by varying rf power and the crystallinity degree of silicon is quite uniform along the growth direction. Further, it has established that with increase in rf power crystalline volume fraction decreases while carbon content increases in the films (© 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)