• grain boundaries;
  • RTA;
  • defect density;
  • gettering;
  • grooving;
  • porous silicon;
  • Al-gettering


In this work, we analyze the effect of three gettering procedures on the variation of the grain boundaries (GBs) defect density in multicrystalline silicon (mc-Si). The effective defect density (NB) was calculated using a theoretical model where we consider the potential barrier induced by the GB as being due to structural defects and impurities. Results are compared to those obtained from C-V measurements. The potential barrier was evaluated from the dark current-voltage (I-V) characteristic performed across the GB. In addition to the Rapid Thermal Annealing (RTA), we use aluminum (Al) in the first gettering procedure, in the second we use porous silicon (PS), whereas in the third one, we realize a chemical damage (grooving). Mc-Si wafers were annealed in an infrared furnace in the same conditions, at temperatures ranging from 600 °C to 1000 °C (© 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)