Double side multicrystalline silicon passivation by one step stain etching-based porous silicon

Authors

  • Seifeddine Belhadj Mohamed,

    1. Laboratoire de Photovoltaïque, Centre de Recherches et des Technologies de l'Energie, Technopole de Borj-Cédria, BP 95, 2050 Hammam-Lif, Tunisia
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  • Mohamed Ben Rabha,

    Corresponding author
    1. Laboratoire de Photovoltaïque, Centre de Recherches et des Technologies de l'Energie, Technopole de Borj-Cédria, BP 95, 2050 Hammam-Lif, Tunisia
    • Phone: +21679325160, Fax: +21679325825

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  • Brahim Bessais

    1. Laboratoire de Photovoltaïque, Centre de Recherches et des Technologies de l'Energie, Technopole de Borj-Cédria, BP 95, 2050 Hammam-Lif, Tunisia
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Abstract

In this paper, we investigate the effect of stain etching-based porous silicon on the double side multicrystalline silicon. Special attention is given to the use of the stain etched PS as an antireflection coating as well as for surface passivating capabilities. Stain etching of double side multicrystalline silicon leads to the formation of PS nanostructures, that dramatically decrease the surface reflectivity from 30% to about 7% and increase the effective lifetime from 1 µs to 10 µs at a minority carrier density (Δn) of 1015 cm–3. These results let us correlate the rise of the lifetime values to the photoluminescence intensity to the hydrogen and oxide passivation as shown by FTIR analysis. This low-cost PS formation process can be applied in the photovoltaic cell technology as a standard procedure (© 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

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