Influence of porous silicon passivation layer and TiO2 coating on the optoelectronic properties of multicrystalline Si substrate

Authors

  • N. Janene,

    Corresponding author
    1. Photovoltaic Laboratory Research and Technology Centre of Energy, Borj-Cedria Science and Technology Park, BP 95, 2050 Hammam-Lif, Tunisia
    • Photovoltaic Laboratory Research and Technology Centre of Energy, Borj-Cedria Science and Technology Park, BP 95, 2050 Hammam-Lif, Tunisia

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  • A. Hajjaji,

    1. Photovoltaic Laboratory Research and Technology Centre of Energy, Borj-Cedria Science and Technology Park, BP 95, 2050 Hammam-Lif, Tunisia
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  • M. Ben Rabha,

    1. Photovoltaic Laboratory Research and Technology Centre of Energy, Borj-Cedria Science and Technology Park, BP 95, 2050 Hammam-Lif, Tunisia
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  • M. A. El Khakani,

    1. Institut National de la Recherche Scientifique, INRS-Énergie, Matériaux et Télécommunications, 1650, Blvd. Lionel-Boulet, Varennes, Québec J3X 1S2, Canada
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  • B. Bessais,

    1. Photovoltaic Laboratory Research and Technology Centre of Energy, Borj-Cedria Science and Technology Park, BP 95, 2050 Hammam-Lif, Tunisia
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  • M. Gaidi

    1. Photovoltaic Laboratory Research and Technology Centre of Energy, Borj-Cedria Science and Technology Park, BP 95, 2050 Hammam-Lif, Tunisia
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Abstract

In this work a novel passivation technique is proposed for multicrystalline silicon wafers for the purpose of solar cell application. The new method combines the use of double treatment based on porous Si and TiO2 passivation. Porous silicon (PS) was prepared by electrochemical anodization of multi crystalline substrates (mc-Si) under different conditions of current density (The current density used is between 3 and 50 mA/cm2). It was demonstrated that the porosity increases with increasing current density from 27, 66% to 81%. TiO2 nanoparticles with different nanometric sizes were incorporated inside pores by the way of the pulsed laser deposition (PLD) technique. The deposited layers have been characterized by spectrophotometry, Fourier transform infrared spectroscopy (FTIR) analysis. It was found that the binary structure of TiO2/PS minimizes the average reflectivity of the mc-Si substrates from 36% for bare multi crystalline silicon to around 14% for treated substrate. The TiO2/porous Si treated samples present high photoluminescence intensity and an enhancement of the optoelectronic properties. As a result the effective minority carrier lifetime shows a strong improvement after the combined treatment (© 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

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