Investigation of Si nanowires from VLS growth

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Abstract

Si nanowires are of interest for photovoltaics and sensors. We report about the growth of Si nanowires from SiH4 using a Au catalyzed vapor-liquid-solid (VLS) growth process in a tube furnace at atmospheric pressure. At elevated growth temperatures, single crystalline wires with clear facets are obtained. The influence of the furnace temperature and the Au layer thickness on the nanowire growth is investigated in detail. The orientation of the wires has been studied by EBSD. For electrical characterization, Pt metal contacts have been applied to individual wires using Pt deposition in a FIB microscope. The high values found for the conductivity indicate that Ga implantation occurs during the FIB process. Electrical characterization under illumination shows the presence of a significant photoconductivity. Further functionalization of the Si nanowires will be done by combining them with luminescent nanoparticles (© 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

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