SEARCH

SEARCH BY CITATION

Keywords:

  • silicon;
  • quantum dots;
  • doping

Abstract

Here we investigate the effects of phosphorous (P) doping of silicon quantum dots in a silicon dioxide superlattice structure. The doping occurs by diffusion of P during high-temperature annealing from P-rich silicon dioxide regions to directly adjacent layers containing the quantum dots embedded in oxide. Secondary ion mass spectroscopy (SIMS) is used to clearly show that after annealing, the P preferentially resides in the regions containing the dots. Once in these regions, electron paramagnetic resonance (EPR) shows that a relatively small fraction of this P is used to passivate dangling bonds on the surfaces of the quantum dots. Additionally, EPR shows no evidence that any of the P is located in the interior of the dot. Using calibrated SIMS values along with the EPR evidence allows us to conclude that the P is concentrated in the area surrounding the dots in a non-paramagnetic configuration. (© 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)