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Keywords:

  • quantum wires;
  • strain distribution

Abstract

We calculated displacement and stress field, as well as strain energy for GaAs nanowires grown on Si substrate. For calculations variational method was used. For radial coordinate dependence polynomial dependence (with linear and quadratic terms) and for vertical coordinate dependence exponential functions are taken inside the wire region. Radial and vertical displacements decreases as 1/r with increasing radial coordinate in substrate outside the wire region (© 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)