Porosity dependence of positive magnetoconductance in n-type porous silicon

Authors

  • Bassem Chouaibi,

    Corresponding author
    1. Laboratoire Matériaux Avancés et Phénomènes Quantiques, Faculté des Sciences de Tunis, Université El Manar, 2092 Campus universitaire, Tunis, Tunisia
    • Phone: +216 98 921 286

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  • Moufid Radaoui,

    1. Laboratoire Matériaux Avancés et Phénomènes Quantiques, Faculté des Sciences de Tunis, Université El Manar, 2092 Campus universitaire, Tunis, Tunisia
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  • Amel Benfredj,

    1. Laboratoire Matériaux Avancés et Phénomènes Quantiques, Faculté des Sciences de Tunis, Université El Manar, 2092 Campus universitaire, Tunis, Tunisia
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  • Samir Romdhane,

    1. Laboratoire Matériaux Avancés et Phénomènes Quantiques, Faculté des Sciences de Tunis, Université El Manar, 2092 Campus universitaire, Tunis, Tunisia
    2. Faculté des Sciences de Bizerte, 7021 Zarzouna, Bizerte, Université de Carthage, Tunisia
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  • Mongi Bouaïcha,

    1. Laboratoire de Photovoltaïque, Centre de Recherches et des Technologies de l'Energie, BP 95, Hammam-Lif 2050, Tunisia
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  • Habib Bouchriha

    1. Laboratoire Matériaux Avancés et Phénomènes Quantiques, Faculté des Sciences de Tunis, Université El Manar, 2092 Campus universitaire, Tunis, Tunisia
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Abstract

Positive magnetoconductance (MC) on n-type porous silicon (PS) based devices was observed at room temperature for low static magnetic field (under 6000 G). We found that the measured MC decreases when the film porosity is increased. Obtained results were analyzed by means of the quasi-1D weak localization (WL) theory. From the dependence of the MC vs. applied magnetic field, we determine the phase coherence length Lϕ. Good agreement between theoretical and experimental results was found (© 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

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