• silicon;
  • bonding;
  • dislocations;
  • luminescence


Structure and low temperature photoluminescence of Si(001) hydrophilic bonded wafers have been studied. Even at minimal misfit angles the observed dislocation related luminescence (DL) did not coincide with the luminescence of isolated dislocations. The dependence of spectral distribution of DL on the dislocation network density has been studied and analyzed on the basic of previously suggested recombination model. A strong dependence of the spectral distribution of DL on the misfit angle has been found. The temperature dependence of different sub bands in DL spectra has been interpreted in the model of successive thermal emptying of upper states. The similar behavior of DL at increasing temperature and increasing density of misfit dislocations has been interpreted in the model of a relative dependence of dislocation related upper states on the distance between dislocations (© 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)