Dislocation luminescence in highly doped degenerated germanium at room temperature

Authors

  • Tzanimir Arguirov,

    Corresponding author
    1. Joint Lab IHP/BTU Cottbus, Brandenburgische Technische Universität Cottbus, PO Box 101344, 03013 Cottbus, Germany
    2. Leibniz-Institut für innovative Mikroelektronik IHP, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany
    • Phone: +49 355 69 3982, Fax: +49 355 69 2906
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  • Oleg Vyvenko,

    1. St. Petersburg State University, Ulyanovskaya 1, 198504 St. Petersburg, Russia
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    • Phone: +7 812 428 4396, Fax: +7 812 428 4478

  • Michael Oehme,

    1. Institut für Halbleitertechnik, Universität Stuttgart, Pfaffenwaldring 47, 70569 Stuttgart, Germany
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  • Jörg Schulze,

    1. Institut für Halbleitertechnik, Universität Stuttgart, Pfaffenwaldring 47, 70569 Stuttgart, Germany
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  • Martin Kittler

    1. Joint Lab IHP/BTU Cottbus, Brandenburgische Technische Universität Cottbus, PO Box 101344, 03013 Cottbus, Germany
    2. Leibniz-Institut für innovative Mikroelektronik IHP, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany
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Abstract

Dislocation related electroluminescence was detected in germanium p-i-n diodes grown on silicon using a virtual substrate. It appears at room temperature and above a certain threshold of the excitation current. The spectral feature characterizing dislocation related radiation consists of three peaks at around 0.45 eV. The appearance of the dislocation related peaks in the spectrum goes along with a change in the growth rate of the direct band-to-band luminescence upon increasing of the current through the structure. The observation is consistent with an injection of minority carriers in the p+ and n+ regions of the diode. As the p+ region contains the misfit dislocation rich virtual substrate it becomes a source of dislocation luminescence. (© 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

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