Energetic spectra of dislocation networks produced by hydrophilic bonding of silicon wafers

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Abstract

Electronic states of dislocation networks produced by Si wafers bonding was studied by means of deep level transient and admittance spectroscopy methods. A strong field-enhanced hole thermoemission was established for one shallow and one deep states in p-type Si that was explained in the framework of dislocation-related Poole-Frenkel-effect model. The shallow dislocation related states situated close to the valence as well as to the conduction band of silicon were found to be associated with the broad energetic bands with rapid interstate exchange. (© 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

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