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Influence of Ga doping on the microstructure of 3C-SiC layers grown on 4H-SiC substrates by VLS mechanism

  1. Maya Marinova1,
  2. Alkyoni Mantzari1,*,
  3. Ariadne Andreadou1,
  4. Jean Lorenzzi2,
  5. Gabriel Ferro2,
  6. Efstathios K. Polychroniadis1

Article first published online: 29 NOV 2012

DOI: 10.1002/pssc.201200399

Issue

physica status solidi (c)

physica status solidi (c)

Special Issue: International Conference on Extended Defects in Semiconductors (EDS 2012), see further papers in Phys. Status Solidi A 210, No. 1 (2013).

Volume 10, Issue 1, pages 72–75, January 2013

Additional Information

How to Cite

Marinova, M., Mantzari, A., Andreadou, A., Lorenzzi, J., Ferro, G. and Polychroniadis, E. K. (2013), Influence of Ga doping on the microstructure of 3C-SiC layers grown on 4H-SiC substrates by VLS mechanism. Phys. Status Solidi C, 10: 72–75. doi: 10.1002/pssc.201200399

Author Information

  1. 1

    Physics Department, Aristotle University of Thessaloniki, 54124, Thessaloniki, Greece

  2. 2

    Laboratoire des Multimatériaux et Interfaces, UMR-CNRS 5615, Bat. Berthollet, UCB Lyon 1, 43 Bd du 11 Nov 1918, 69622 Villeurbanne Cedex, France

*Phone: +00 30 2310 998092, Fax: +00 30 2310 998241

Publication History

  1. Issue published online: 24 JAN 2013
  2. Article first published online: 29 NOV 2012
  3. Manuscript Accepted: 21 SEP 2012
  4. Manuscript Revised: 24 JUL 2012
  5. Manuscript Received: 20 JUN 2012

Funded by

  • European Commission through the MANSiC project. Grant Number: MRTN-CT-2006-035735

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Keywords:

  • 3C-SiC;
  • Ga doping;
  • TEM;
  • defects

Abstract

This work focuses on the Transmission Electron Microscopy investigation of p-type doped 3C-SiC layers grown by Vapor-Liquid-Solid mechanism using Si-Ga melts on 4H-SiC substrates. Ga concentration strongly influences the appearance of defects in the grown layers. Ga inclusions are observed only in the layer grown at the highest temperature and lowest Ga content in the melt. At the highest concentration of Ga in the melt main defects are dislocations forming periodic bands along 〈equation image〉 and 〈equation image〉 directions. The most appropriate conditions (in terms of defect density) for VLS growth using SiGa melts, as defined from the current study, should be growth in Si25Ga75 alloy at T = 1200 ºC. (© 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

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