Destruction-polymerization transformations as a source of radiation-induced extended defects in chalcogenide glassy semiconductors

Authors

  • Oleh Shpotyuk,

    Corresponding author
    1. Institute of Physics, Jan Dlugosz University, Al. Armii Krajowej 13/15, 42200, Częstochowa, Poland
    2. Lviv Scientific Research Institute of Materials, SRC “Carat”, Stryjska str. 202, 79031 Lviv, Ukraine
    • Phone: +38 032 263 8303, Fax: +38 032 294 9735
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  • Jacek Filipecki,

    1. Lviv Scientific Research Institute of Materials, SRC “Carat”, Stryjska str. 202, 79031 Lviv, Ukraine
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  • Mykhaylo Shpotyuk

    1. Lviv Scientific Research Institute of Materials, SRC “Carat”, Stryjska str. 202, 79031 Lviv, Ukraine
    2. Department of Semiconductor Electronics, Lviv Polytechnic National University, Bandery str. 12, 79013 Lviv, Ukraine
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Abstract

Long-wave shift of the optical transmission spectrum in the region of fundamental optical absorption edge is registered for As2S3 chalcogenide glassy semiconductors after γ-irradiation. This effect is explained in the frameworks of the destruction-polymerization transformations concept by accepting the switching of the heteropolar As–S covalent bonds into homopolar As–As ones. It is assumed that (As4+; S1) defect pairs are created under such switching. Formula to calculate content of the induced defects in chalcogenide glassy semiconductors is proposed. It is assumed that defects concentration depends on energy of broken covalent bond, bond-switching energy balance, correlation energy, optical band-gap and energy of excitation light. It is shown that theoretically calculated maximally possible content of radiation-induced defects in As2S3 is about 1.6% while concentration of native defects is negligible. (© 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

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