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Keywords:

  • dislocation network;
  • hydrogen passivation;
  • silicon direct wafer bonding;
  • wet-chemical etching

Abstract

The hydrogen penetration and its impact on electro-physical properties of dislocation network (DN) at the interface of directly bonded silicon wafers located close to the surface of semiconductor are investigated. The evolution of spectra of deep level transient spectroscopy (DLTS) after low temperature reverse bias annealing (RBA) procedure was monitored. It is established that DN resists the penetration of hydrogen ions into the bulk of silicon wafer. The dependence of amount of penetrated hydrogen on of dislocation density in DN is obtained and the model of its explanation is suggested. It is demonstrated that the hydrogenation did not reduce the concentration of shallow dislocation-related levels and that the amount of hydrogen introduced by wet chemical etching is sufficient to eliminate detrimental action of deep levels. (© 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)