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Keywords:

  • electron escape and capture;
  • GaInNAs;
  • quantum well depth;
  • solar cells

Abstract

Carrier escape and capture processes in a GaInA/GaAs quantum well (QW) and a GaInNAs/GaAs QW are compared through modelling using a rate equation approach. QW compositions corresponding to bandgaps of 0.983 eV, 1.000 eV and 1.100 eV are considered for applications in solar cells. For GaInAs a standard alloy model is used, including strain effects, while for GaInNAs the Band Anticrossing (BAC) model is used. The roles of 1. the conduction band QW barrier height and 2. the corresponding effective mass in affecting the electron escape and capture in the QW are considered in detail. The contribution of photogenerated currents from the barrier and QW are considered. The effect of QW depth is found to be larger than changes in the electron effective mass. (© 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)