Mechanical stress control in GaN films on sapphire substrate via patterned nanocolumn interlayer formation

Authors

  • Dmitry Artemiev,

    Corresponding author
    1. LLC Optogan NTL, Tallinskoe 206, 198025 St. Petersburg, Russia
    2. St. Petersburg National Research University ITMO, Kronverkskiy 49, 197101 St. Petersburg, Russia
    • Phone: +7 812 4068067
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  • Vladislav Bougrov,

    1. St. Petersburg National Research University ITMO, Kronverkskiy 49, 197101 St. Petersburg, Russia
    2. CJSC Optogan, Tallinskoe 206, 198025 St. Petersburg, Russia
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  • Maxim Odnoblyudov,

    1. St. Petersburg National Research University ITMO, Kronverkskiy 49, 197101 St. Petersburg, Russia
    2. CJSC Optogan, Tallinskoe 206, 198025 St. Petersburg, Russia
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  • Alexey Romanov

    1. LLC Optogan NTL, Tallinskoe 206, 198025 St. Petersburg, Russia
    2. St. Petersburg National Research University ITMO, Kronverkskiy 49, 197101 St. Petersburg, Russia
    3. Ioffe Physical-Technical Institute, RAS, Polytekhnicheskaya 26, 194021 St. Petersburg, Russia
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Abstract

Reduction of mechanical stress generated in GaN films is an important issue for production high quality templates for manufacturing more efficient light emitting diodes. One of the techniques to reduce such stress is a patterned nanocolumn interlayer formation at the vicinity of GaN/sapphire interface with the following GaN overgrowth. The aim of the present research is to prove the effectiveness of the described method in stress reduction and to find out the optimal configuration for patterned nanocolumn interlayer. Another aspect of the study is to investigate a possibility of self-separation of the overgrown GaN layer by nanocolumns cracking while cooling. (© 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

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