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Keywords:

  • ion implantation;
  • Zn;
  • ZnO nanoparticle;
  • Rutherford backscattering spectroscopy;
  • optical absorption;
  • photoluminescence

Abstract

The investigation of ZnO NPs formation in SiO2/Si structure by Zn+ ion implantation with furnace annealing is presented. After implantation the samples were subsequently isochronally subjected to annealing during 1 h in nitrogen at 400 °C, and then in oxygen at 600 and 800 °C. The radiation defects and Zn implant profiles were investigated by Rutherford backscattering spectroscopy. Optical absorption spectra from reflection experiment data of the test samples were studied at room temperature in a spectral range 250-600 nm. Photoluminescence was spent using He-Cd laser with wavelength 325 nm in a spectral range of 240-800 nm. After implantation in SiO2 film were created metal Zn NPs. After annealing at 400 °C Zn there occurred increasing of Zn NP size. During annealing in temperature range of 600-800 °C there occurred transformation from Zn metal NPs to its oxide form ZnO. (© 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)