• Please log in or register to access this feature.

Contributed Article

You have free access to this content

Dislocation formation during laser processing of silicon solar cell materials

  1. Y. Weng1,*,
  2. B. Kedjar2,
  3. K. Ohmer3,
  4. J. R. Köhler3,
  5. J. H. Werner3,
  6. H. P. Strunk1

Article first published online: 10 DEC 2012

DOI: 10.1002/pssc.201200548

Issue

physica status solidi (c)

physica status solidi (c)

Special Issue: International Conference on Extended Defects in Semiconductors (EDS 2012), see further papers in Phys. Status Solidi A 210, No. 1 (2013).

Volume 10, Issue 1, pages 28–31, January 2013

Additional Information

How to Cite

Weng, Y., Kedjar, B., Ohmer, K., Köhler, J. R., Werner, J. H. and Strunk, H. P. (2013), Dislocation formation during laser processing of silicon solar cell materials. Phys. Status Solidi C, 10: 28–31. doi: 10.1002/pssc.201200548

Author Information

  1. 1

    Institute of Material Sciences, Chair of Material Physics, University of Stuttgart, Heisenbergstr. 3, 70569 Stuttgart, Germany

  2. 2

    Stuttgart Center for Electron Microscopy, Max-Planck Institute for Intelligent Systems, Heisenbergstr. 3, 70569 Stuttgart, Germany

  3. 3

    Institute for Photovoltaics, University of Stuttgart, Pfaffenwaldring 47, 70569 Stuttgart, Germany

*Phone: + 49 711 685 61908, Fax: +49 711 689 3412

Publication History

  1. Issue published online: 24 JAN 2013
  2. Article first published online: 10 DEC 2012
  3. Manuscript Accepted: 9 OCT 2012
  4. Manuscript Revised: 28 AUG 2012
  5. Manuscript Received: 31 JUL 2012

SEARCH

SEARCH BY CITATION

ARTICLE TOOLS

Get PDF (258K)

Keywords:

  • laser processing;
  • dislocation formation;
  • silicon solar cells;
  • transmission electron microscopy

Abstract

Laser processing, increasingly used for solar cell production, induces defects when choosing inappropriate process parameters. Besides the shape and the pulse energy of the laser, also the surface orientation of silicon substrate has a great influence on the defect formation. By applying a laser beam with a line focus exceeding the critical values such as line width and laser pulse energy, the development of dislocations is observed on (111)-oriented wafers by transmission electron microscopy (TEM). As a result, the formed dislocations are arranged practically parallel to each other in planes parallel to the (111) surface. Their Burgers vectors lie within this plane too. Thus classical concepts of epitaxy hardly explain the dislocation formation. Alternative explanations have to take into account the excessively high temperature close to the melting point, the short time frames given by the laser pulse duration (100 ns) and the not yet analyzed inhomogeneous stress distribution. (© 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

Get PDF (258K)