A quantum dot nucleated on the edge of a threading dislocation: elastic and electric field effects

Authors

  • Grzegorz Jurczak,

    Corresponding author
    1. Institute of Fundamental Technological Research of the Polish Academy of Sciences, ul. Pawin´ skiego 5b, 02-106 Warsaw, Poland
    • Phone: +48-22-8261281 ext.144, Fax: +48-22-8269615
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  • Toby D. Young,

    1. Institute of Fundamental Technological Research of the Polish Academy of Sciences, ul. Pawin´ skiego 5b, 02-106 Warsaw, Poland
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  • Paweł Dłużewski

    1. Institute of Fundamental Technological Research of the Polish Academy of Sciences, ul. Pawin´ skiego 5b, 02-106 Warsaw, Poland
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Abstract

In this work the affect of a threading dislocation localised on the edge of GaN/AlN quantum dot is analysed. A standard piezoelectric continuum model is extended to allow the embodiment of threading dislocations that are modelled as a continuous electro-elastic line defect originating in the matrix material. Two common types of dislocation are considered: an edge-type and a screw-type.

It is demonstrated that the presence of a TD provides local region of tensile strain as a preferential condition for GaN QD growth by reduction of the GaN / AlN lattice mismatch. It is found that dislocation induced potential causes a measurable in-plane shift of the electron/hole localisation and an asymmetric decrease in the band-to-band transition energy. (© 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

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